Metal-Semiconductor Field-Effect Transistors (MESFETs) have long been pivotal in bridging fundamental semiconductor physics with high-performance electronic applications. As devices that combine metal ...
A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
A new technical paper titled “Cross-Shape Reconfigurable Field Effect Transistor for Flexible Signal Routing” was published by researchers at NaMLab gGmbH, École Centrale de Lyon, and TU Dresden. “A ...
A semiconductor amplifying device with up to 100-meg input impedance is now available from an American manufacturer. (Some French firms already have announced field-effect devices.) Crystalonics, ...
Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...
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