A new publication from Opto-Electronic Science; DOI 10.29026/oes.2024.230046 discusses photo-driven Fin Field-Effect Transistors. Infrared detectors are the core components of infrared detection ...
A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...
HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...
A new methodology to assess the impact of fabrication inherent process variability on 14-nm fin field effect transistor (FinFET) device performance. August 18th, 2021 - By: Coventor A new methodology ...
The most important significance of Samsung Electronics recently commercializing its 3nm GAA (gate-all-around) process technology lies in leading the paradigm shift of next-generation transistor ...
A new technique uses standard chip fab methods to fabricate the building block of a timing device, critical to all microprocessors. Currently, this timing device, known as an acoustic resonator, must ...
The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.
Nanoelectronics – in which semiconductor components’ critical features such as logic transistors and memory measure well under 100 nm – is a new and rapidly growing field. Potential applications in ...
A method of repurposing existing techniques to produce a microprocessor timing device in a standard chip fab plant could address supply chain and security weak points. (Photo courtesy of Second Bay ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results