Gallium nitride (GaN) is a highly promising material for a wide range of optical and high-power electronic devices, which can be fabricated by dry etching with plasmas. However, the plasma-induced ...
Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...
In this interview, AZoM talks to Bas Derksema about advancements in plasma etching and deposition processes for compound semiconductor materials applications. Please could you introduce yourself and ...
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