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Alpha and Omega Semiconductor Enables 48V Hot Swap in AI Servers with New High SOA MOSFET in LFPAK 8x8

State-of-the-art MOSFET handles higher peak currents delivering a cost-effective, high-performance and enhanced reliability hot swap solution The AOLV66935 utilizes AOS’ 100V AlphaSGT™ proprietary ...
Compound Semiconductor

Japanese start-up demos diamond MOSFET breakthroughs

Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the ...

Navitas Adds Top-Side Cooled QDPAK and Low-Profile TO-247-4L to its Package Line-Up in the Latest 5th Generation GeneSiC™ Technology

Navitas Semiconductor Corporation. QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar ...
Compound Semiconductor

Wolfspeed introduces first 10kV SiC Power MOSFET

Wolfspeed has announced the industry's first commercially available 10 kV SiC power MOSFET, describing it as setting a new ...
Electronic Design

Power MOSFET Technology Extends Battery Life In Portable Devices

Designed for highly efficient, low- R DS(ON) power MOSFETs, the V-Tr FET technology developed by SilTerra Malaysia Sdn Bhd and South Sea Semiconductor Ltd. features a narrow-trench gate electrode with ...
Business Wire

Wolfspeed Launches New Gen 4 MOSFET Technology Platform to Deliver Breakthrough Performance in Real-World Conditions for High-Power Applications

DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, today introduced its new Gen 4 technology platform, which enables design rooted in ...
Nasdaq

Alpha and Omega Semiconductor Introduces MRigidCSP™ Package Technology Strengthening its Battery Management MOSFETs

SUNNYVALE, Calif.--(BUSINESS WIRE)-- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of power discretes, ICs, modules, and ...
EDN

Linear Technology : 3 A MOSFET driver enables high efficiency step-down or step-up dc-dc converters

This powerful driver can source up to 2.5A with a 1.2 Ohm pull-down impedance for driving the top MOSFET and source 3A with a 0.55 Ohm pull-down impedance for the bottom MOSFET, making it ideal for ...
EDN

Renesas Technology’s Latest Integrated Driver-MOSFET Achieves Industry’s Best Power Supply Efficiency – 96.5 percent – and Has a 6x6mm Package for Intel DrMOS Standard ...

Renesas Technology's Latest Integrated Driver-MOSFET Achieves Industry's Best Power Supply Efficiency – 96.5 percent – and Has a 6x6mm Package for Intel DrMOS Standard Products Renesas announced the ...
Nasdaq

Navitas Semiconductor Launches New SiCPAK™ Power Modules with Advanced Epoxy-Resin Technology for High-Power Applications

Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...
Business Wire

GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison - Research and Markets

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering. The report proposes an in-depth ...
Electronic Design

650 V Power MOSFET Steps Up Superjunction Technology

Infineon’s CoolMOS C7 utilizes their 650 V Superjunction MOSFET technology in optimizing the n-channel power MOSFET for hard switching topologies such as CCM PFC, TTF and solar boost. Typical ...