A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...

Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...

Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...