Many electric vehicle (EV) power electronics systems use silicon carbide (SiC) and gallium nitride (GaN) devices. These ...
For nearly two decades, two-dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy-efficient ...
Intel unveils 18A-P with Power Boost dual-contact transistors, delivering 9% higher performance, 18% lower power, and ...
An international team of researchers from Queen Mary University of London, the University of Oxford, Lancaster University, and the University of Waterloo have developed a new single-molecule ...
In this work, we focus on exploring the capabilities and limitations of TFT technology to enable Watt-level power delivery by means of one vital power delivery circuit block, the boost DC-DC converter ...
For decades, chipmakers kept Moore’s Law alive by shrinking transistors sideways, etching ever-finer features into flat slabs ...
In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...
The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...
Transistors etched into the latest processor designs now measure just a few nanometers across, placing them well below the ...