CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...
UNTERHACHING, Germany--(BUSINESS WIRE)--Vincotech, a supplier of module-based solutions for power electronics, today announced the launch of new neutral-point-clamped power modules featuring the ...
1SP0635 SCALE-2 Plug-and-Play drivers safely and reliably drive 130 x 140 mm and 190 x 140 mm high-voltage and high-power IGBT modules ranging from 1200 V to 3300 V. They are optimised for use in high ...
Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...
With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of ...
As the relatively mature wire-bonding technology continues to advance, it has become fully suitable for processing automotive silicon-based IGBT modules, and SiC (silicon carbide) power modules and is ...
After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...
Infineon Technologies AG uses the advanced neutral-point-clamped (ANPC) topology for its hybrid silicon-carbide (SiC) and IGBT power module EasyPACK 2B in the 1200-V family. Optimizing for sweet-spot ...
Onsemi has released an upgraded series of power modules to boost utility-scale solar generation and storage. The new line consists of silicon and silicon carbide hybrid power-integrated modules (PIMs) ...
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